Integrated detector device and method of manufacturing an integrated detector device

Abstract

An integrated detector device for direct detection of X-ray photons includes a CMOS body including a substrate portion and a dielectric portion arranged on a main surface of the substrate portion, an integrated circuit in the CMOS body having implants at or above the main surface for forming charge collectors, and a metal structure in the dielectric portion that extends from the charge collectors to a contact surface of the dielectric portion facing away from the substrate portion. The device further includes an absorber portion arranged on the contact surface of the dielectric portion, the absorber portion including an absorber element that is in electrical contact with the metal structure, and an electrode structure that is in direct contact with the absorber element forming an electrical contact. The absorber element is configured to absorb X-ray photons and generate electrical charges based on the absorbed X-ray photons.