The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Oct. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinmyoung Lee, Gumi-si, KR;

Hyungsoon Jang, Hwaseong-si, KR;

Baekyoung Kim, Hwaseong-si, KR;

Hyunah Roh, Goyang-si, KR;

Jongsoo Baek, Hwaseong-si, KR;

Boyoung Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/10 (2025.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H10D 89/10 (2025.01); G06F 30/392 (2020.01);
Abstract

A semiconductor device includes a substrate having first to fourth regions, first to third active regions and a first dummy active region extending on the first to fourth regions, respectively, a first gate structure intersecting the first active region on the first region and including a first gate conductive layer, a second gate structure intersecting the second active region on the second region and including a second gate conductive layer, a third gate structure intersecting the third active region on the third region find including a third gate conductive layer, a first dummy gate structure intersecting the first dummy active region on the fourth region and including a first dummy gate conductive layer, and source/drain regions on the first to third active regions and on both sides of the first to third gate structures.


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