The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Nov. 14, 2023
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yu-Hao Ho, Hsinchu City, TW;
Cheng-Tsung Wu, Taipei City, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes an epitaxial layer disposed on a substrate, which both have a first conductivity type. A first well region having a second conductivity type is disposed in the epitaxial layer. A gate is disposed on the first well region. A source contact region and a drain contact region both having the first conductivity type are disposed in the first well region. A second well region having the first conductivity type is disposed in the epitaxial layer, laterally abuts the first well region and is in contact with a portion of the substrate. The second well region and the portion of the substrate constitute a resistor that is electrically coupled to a ground terminal. A heavily doped region having the first conductivity type is disposed in the second well region and electrically connected to the source contact region.