The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Apr. 20, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Tadashi Yamaguchi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 64/01 (2025.01); H10W 72/00 (2026.01); H10W 72/59 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 64/01 (2025.01); H10W 72/019 (2026.01); H10W 72/07554 (2026.01); H10W 72/59 (2026.01); H10W 72/884 (2026.01); H10W 72/944 (2026.01); H10W 72/952 (2026.01); H10W 90/736 (2026.01); H10W 90/756 (2026.01);
Abstract
A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the second metal crystal grains has no dislocations. The number of the first metal crystal grains having the dislocations is larger than the number of the second metal crystal grains having no dislocations.