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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12628405 B1

PDFFull Text
Date of Patent:
May. 12, 2026

Filed:

Mar. 02, 2023

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Tatsuo Shimizu, Tokyo, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Andre C Stevenson

Int. Cl.
CPC ...
H10D 64/00 (2025.01); B60R 1/02 (2006.01); B61C 3/00 (2006.01); B61C 9/50 (2006.01); B66B 11/04 (2006.01); H02P 27/06 (2006.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01); H10P 14/692 (2026.01); H10P 30/22 (2026.01);
U.S. Cl.
CPC ...
H10D 64/118 (2025.01); H10D 12/031 (2025.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/8325 (2025.01); H10P 14/69215 (2026.01); H10P 30/22 (2026.01); B60R 1/02 (2013.01); B61C 3/00 (2013.01); B61C 9/50 (2013.01); B66B 11/043 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cmor more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×10cmor more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.

Find Patent Forward Citations

Shimizu, Tatsuo. (2026). Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator (U.S. Patent No. 12628405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628405

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