The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Oct. 16, 2023
Lg Display Co., Ltd., Seoul, KR;
Jaeyoon Park, Paju-si, KR;
Jinwon Jung, Paju-si, KR;
Hyeonjoo Seul, Paju-si, KR;
Sungju Choi, Paju-si, KR;
Dongyeon Kang, Paju-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A thin film transistor comprises an active layer; and a gate electrode spaced apart from the active layer to at least partially overlap the active layer in a plan view. The active layer includes a channel area that is overlapped by the gate electrode in the plan view; a source area connected to one side of the channel area without being overlapped by the gate electrode in the plan view; and a drain area connected to the other side of the channel area without being overlapped by the gate electrode in the plan view. The source area and the drain area are spaced apart from each other with the channel area interposed therebetween. The active layer includes a first source conductorization control area and a first drain conductorization control area, which are spaced apart from each other. The first source conductorization control area corresponds to at least a portion of the channel area in the plan view, and the first drain conductorization control area corresponds to at least a portion of the channel area in the plan view.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile