Semiconductor device and method of manufacturing the semiconductor device

Abstract

A semiconductor device includes an active fin protruding from a substrate, extending in a first direction, and defined by a device isolation layer. Gate structures intersect the active fin and extend in a second direction. Each of the gate structures includes a gate and gate spacers on side surfaces of the gate. Epitaxial layers are disposed on the active fin, on opposite sides of the gate structure, and include a first epitaxial layer providing a drain region and a second epitaxial layer providing a source region. The gate spacers include a first spacer disposed between the first epitaxial layer and the gate. The first spacer includes a first region extending in a third direction, along a side surface of the gate, and a second region extending from a lower portion of the first region in a direction away from the gate.