Semiconductor device including channel layers and method of manufacturing the semiconductor device

Abstract

A semiconductor device including: a stack including first conductive layers and insulating layers that are alternately stacked; second conductive layers disposed on the stack; a separation insulating structure disposed on the stack and configured to insulate the second conductive layers from each other; first channel layers passing through the stack; memory layers enclosing sidewalls of the first channel layers; second channel layers disposed on the stack and passing through the second conductive layers, and each having a width less than a width of the first channel layers; gate insulating layers enclosing sidewalls of the second channel layers; and third channel layers configured to respectively couple the first channel layers with the second channel layers and extending into the second channel layers.