The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

May. 25, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Mutsumi Okajima, Yokkaichi Mie, JP;

Tsuneo Inaba, Kamakura Kanagawa, JP;

Hiromitsu Mashita, Tokyo, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10B 12/33 (2023.02); H10B 12/036 (2023.02); H10B 12/05 (2023.02); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 99/00 (2025.01);
Abstract

According to one embodiment, a memory includes: a first transistor including: a first semiconductor between the substrate and the bit line; and a first gate facing a side of the first semiconductor; a first memory element between the first transistor and the substrate; a first word line including a first conductor coupled to the first gate; a second transistor including: a second semiconductor between the substrate and the bit line; and a second gate facing a side of the second semiconductor; a second memory element between the second transistor and the substrate; and a second word line being adjacent to the first word line in a first direction and including a second conductor coupled to the second gate. The second semiconductor is adjacent to the first semiconductor in a second direction intersecting the first direction.


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