The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jan. 09, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyungeun Choi, Suwon-si, KR;

Kiseok Lee, Suwon-si, KR;

Haejoon Lee, Suwon-si, KR;

Seungjae Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/50 (2023.02); H10B 80/00 (2023.02);
Abstract

A semiconductor memory device may include a lower layer including a first region and a second region, the lower layer extending in a first direction and a second direction perpendicular to the first direction, and a stack including word lines and interlayer insulating patterns, which are alternatingly stacked in a third direction perpendicular to the first direction and the second direction, the stack having a staircase structure on the second region. The word lines may extend from the first region to the second region in the first direction. Each of the word lines may include sub-gate electrodes, which extend parallel to each other in the first region, and a word line pad, which is connected in common to the sub-gate electrodes in the second region.


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