The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 01, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyeok Ahn, Suwon-si, KR;

Hyosub Kim, Seoul, KR;

Sohyun Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02);
Abstract

A semiconductor device includes a substrate having an active area and a non-active area. An extra pad layer is disposed on the active area of the substrate. A first contact layer is disposed in a contact hole defined inside the substrate from a surface of the extra pad layer. A first silicide layer is disposed on both sidewalls of the first contact layer. A buried insulating layer is buried in the contact hole at lateral sides of the first contact layer and the first silicide layer. A second silicide layer is disposed on an upper surface and sidewalls of the extra pad layer. A second contact layer is on the buried insulating layer and the second silicide layer and is in direct contact with the second silicide layer.


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