The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Dec. 13, 2022
Qualcomm Incorporated, San Diego, CA (US);
Xiaopeng Zhong, San Diego, CA (US);
Dinesh Jagannath Alladi, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An apparatus including: a boost voltage generator configured to generate a boost voltage at an output; a first field effect transistor (FET) including a drain/source terminal coupled to the output of the boost voltage generator; a discharging circuit coupled to a source/drain terminal of the first FET, wherein the discharging circuit is configured to discharge the output of the boost voltage generator via the first FET in response to an asserted discharging signal; and a gate voltage boost circuit configured to generate a gate voltage for a gate of the first FET, wherein the gate voltage boost circuit is configured to boost the gate voltage in response to the asserted discharging signal. Another implementation may include a current injection circuit configured to generate and inject a current into the discharging circuit in lieu of or in addition to the gate voltage boost circuit.