The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Aug. 20, 2025
Contemporary Amperex Technology Co., Limited, Ningde, CN;
Kai Wu, Ningde, CN;
Zhipeng Cheng, Ningde, CN;
Dongyang Shi, Ningde, CN;
Ning Chen, Ningde, CN;
Zhi Liu, Ningde, CN;
Yaqian Deng, Ningde, CN;
Yuzhen Wang, Ningde, CN;
CONTEMPORARY AMPEREX TECHNOLOGY CO., LTD., Ningde, CN;
Abstract
The composite silicon material includes an inner core and a silicon-containing cladding layer cladded on the outer side of the inner core. The inner core comprises a silicon-carbon material, the silicon-carbon material includes a porous conductive material and a first silicon-based material, the outer surface of the porous conductive material has pores, and at least a portion of the first silicon-based material is distributed in the pores. The silicon-containing cladding layer contains an ion-conducting material and a second silicon-based material. The second silicon-based material is dispersed in the ion-conducting material. At least a portion of the first silicon-based material is embedded in the pores of the porous conductive material, which can effectively alleviate the problem of silicon expansion; meanwhile, the ion-conducting material can increase the ion transmission path, thereby effectively alleviating the problem of poor dynamic performance caused by the small number of ion transmission paths of the silicon-carbon material.