The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Apr. 04, 2022
Applicant:

Nanoscribe Holding Gmbh, Eggenstein-Leopoldshafen, DE;

Inventors:

Nicole Lindenmann, Niefern-Öschelbronn, DE;

Matthias Blaicher, Ettlingen, DE;

Jörg Hoffmann, Lustadt, DE;

Assignee:

Nanoscribe Holding GmbH, Eggenstein-Leopoldshafen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/44 (2012.01); G03F 1/20 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/44 (2013.01); G03F 1/20 (2013.01); G03F 7/70375 (2013.01); G03F 7/70516 (2013.01); G03F 7/70558 (2013.01); G03F 7/70025 (2013.01);
Abstract

Method (and apparatus) for producing a 3D target structure in lithographic material. Focus region of a laser writing beam travels through a scanning manifold through the lithographic material. In the focus region of the laser writing beam, an exposure dose is irradiated into the lithographic material, and a structure region is locally defined. At least one exposure data set which represents a local exposure dose for the scan manifold as a function of location is determined. A structure which approximates the target structure is defined based on at least one exposure data set. This structure is analyzed and at least one analysis data set which represents the analyzed structure is determined. Deviation data set which represents deviations of the already defined structure from the target structure is determined. At least one correction exposure data set is determined. Correction structure based on the at least one correction exposure data set is defined.


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