The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Oct. 30, 2023
Applicant:

Openlight Photonics, Inc., Goleta, CA (US);

Inventors:

Han Yun, Santa Clara, CA (US);

Erik Johan Norberg, Santa Barbara, CA (US);

John Parker, Goleta, CA (US);

Assignee:

OpenLight Photonics, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01);
Abstract

A device comprises a substrate having lower and upper silicon layers separated by a lower dielectric layer and a III-V structure bonded to the substrate, with first, second, and third sections along an optical axis. The first section comprises a first upper waveguide segment of the upper silicon layer, increasing in width from a first width to a second width at an interface between the first and second sections, the III-V structure overlapping with a tapered portion of the first upper waveguide segment. The second section comprises a second upper waveguide segment of the upper silicon layer decreasing in width, and a first lower waveguide segment of the lower silicon layer wider than the second upper waveguide segment at the interface between the second and third sections. The third section comprises a second lower waveguide segment of the lower silicon layer.


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