The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Jan. 05, 2023
Applicant:
Ouster, Inc., San Francisco, CA (US);
Inventors:
Tarek Al Abbas, Edinburgh, GB;
David Storrar, Falkirk, GB;
Colin Steele, Edinburgh, GB;
Stephen Kwiatkowski, Edinburgh, GB;
Assignee:
Ouster, Inc., San Francisco, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 17/42 (2006.01); G01J 1/44 (2006.01); G01S 7/484 (2006.01); G01S 7/4861 (2020.01); G01S 7/487 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G01S 17/42 (2013.01); G01J 1/44 (2013.01); G01S 7/484 (2013.01); G01S 7/4861 (2013.01); G01S 7/4876 (2013.01); H10B 10/00 (2023.02); G01J 2001/446 (2013.01); G01J 2001/4466 (2013.01);
Abstract
Techniques described herein provide memory redundancy. For example, the memory block for each pixel can be partitioned into multiple memory bins, and the number of memory bins can be larger than the number of time bins. Once a faulty memory cell is identified, an address associated with the memory bin that has the faulty memory cell can be skipped by an address generator. As such, the faulty memory cell is not used to store time-of-fight (ToF) information.