The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Mar. 30, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Kimitoshi Sato, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0042 (2013.01); G01L 9/0054 (2013.01);
Abstract

A semiconductor pressure sensor according to the present disclosure includes: a first silicon substrate; a first silicon oxide film provided on the first silicon substrate and forming a closed space together with the first silicon substrate; a second silicon substrate provided on the first silicon oxide film; a gauge resistor provided on a surface layer of a surface of the second silicon substrate opposite to a surface on which the first silicon oxide film is provided at a position overlapping with the closed space in a plan view; a first electrode electrically connected to one end of the gauge resistor; and a second electrode electrically connected to another end of the gauge resistor.


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