The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Aug. 28, 2023
Lotus Applied Technology, Llc, Beaverton, OR (US);
Eric Dickey, Beaverton, OR (US);
LOTUS APPLIED TECHNOLOGY, LLC, Hillsboro, OR (US);
Abstract
This disclosure relates to methods and systems for inhibiting precursor interactions during radical-enhanced atomic layer deposition. A substrate may be completely exposed to a precursor gas. Meanwhile, a gaseous radical species is directed through a shroud towards the substrate. The gaseous radical species flows through the shroud under sufficient flow and pressure conditions to substantially prevent the precursor gas from flowing into the shroud. The shroud can be alternately positioned over selected regions of the substrate to thereby alternately expose the selected regions of the substrate to the radical species and the precursor gas multiple times. A thin film of reaction product is formed in the selected regions of the substrate and not on undesired surfaces.