The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Aug. 26, 2021
Applicant:

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Peng Jiang, Gainesville, FL (US);

Zhuxiao Gu, Gainesville, FL (US);

Calen Leverant, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 1/118 (2015.01); B81C 1/00 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
B81C 1/00031 (2013.01); G02B 1/118 (2013.01); B81B 2203/0361 (2013.01); B81B 2207/056 (2013.01); B82Y 20/00 (2013.01);
Abstract

Described herein are antireflective materials and methods of making antireflective materials. The material can include a plurality of hierarchical nanostructures on abase substrate and a total specular reflection of less than 3% at a wavelength of about 400 nm to about 1100 nm. The material can have an etched polyimide layer disposed on the superior surface of the hierarchical nanostructures. The materials can also have superhydrophobic characteristics.


Find Patent Forward Citations

Jiang, Peng. (2026). Hierarchical silicon nanostructures, methods of making, and methods of use (U.S. Patent No. 12623901). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12623901

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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