The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Jul. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youngkwang Lee, Seoul, KP;
Sungho Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;
Abstract
A semiconductor system, a semiconductor device, a through-silicon via (TSV) test method, and a method of manufacturing a semiconductor device are provided. The semiconductor system includes a semiconductor device including a buffer die and first to L-th (where L is an integer greater than or equal to 2) stack dies stacked on the buffer die and communicating with the buffer die through N (where N is a positive integer) TSVs; and a TSV test device that measures each of voltages at one end and voltages at another end on the N TSVs according to a clock signal, compares each of the voltages at the one end and the voltages at the other end with a reference voltage, and determines whether each of the N TSVs has a plurality of TSV defect types according to comparison results.