Method of fabricating semiconductor device

Abstract

A method of fabricating a semiconductor device, includes forming a dielectric layer on a substrate; forming a hard mask layer on the dielectric layer; forming mandrel lines on the hard mask layer, each of the mandrel lines extending in a first direction; forming spacers on both sidewalls of each of mandrel lines; removing the plurality of mandrel lines from the spacers; forming a first linear opening corresponding to a first region of a space between adjacent ones of the spacers, in the hard mask layer; forming a second linear opening corresponding to a second region of the space between the adjacent ones, the second linear opening being adjacent to the first linear opening in the first direction; forming trenches in the dielectric layer using the hard mask layer; and interconnection lines by filling the trenches with a conductive material.