The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Jun. 13, 2022
Korea Institute of Science and Technology, Seoul, KR;
Seung Hyub Baek, Seoul, KR;
Ruiguang Ning, Seoul, KR;
Jae-Hoon Han, Seoul, KR;
Byung Chul Lee, Seoul, KR;
Jungho Yoon, Seoul, KR;
Hyun-Cheol Song, Seoul, KR;
Seong Keun Kim, Seoul, KR;
Chong Yun Kang, Seoul, KR;
Ji-Won Choi, Seoul, KR;
Jin Sang Kim, Jeollabuk-do, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.