The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Sep. 20, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Satoshi Seo, Sagamihara, JP;
Tsunenori Suzuki, Yokohama, JP;
Takumu Okuyama, Atsugi, JP;
Yusuke Takita, Yokohama, JP;
Naoaki Hashimoto, Sagamihara, JP;
Hiromi Seo, Sagamihara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A light-emitting device including an EL layer including a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side is provided. The first layer contains a first organic compound and a second organic compound. The light-emitting layer contains a sixth organic compound. The fourth layer contains a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. A HOMO level of the second organic compound is higher than or equal to −5.7 eV and lower than or equal to −5.2 eV. A HOMO level of the third organic compound is equal to or deeper than the HOMO level of the second organic compound. A difference between the HOMO levels of the second organic compound and the third organic compound is less than or equal to 0.2 eV.