The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Apr. 07, 2023
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Gong Chen, Xiamen, CN;
Su-Hui Lin, Xiamen, CN;
Sheng-Hsien Hsu, Xiamen, CN;
Minyou He, Xiamen, CN;
Kang-Wei Peng, Xiamen, CN;
Ling-Yuan Hong, Xiamen, CN;
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.