The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Dec. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chan Hee Lee, Yongin-si, KR;

Kyung Ho Lee, Suwon-si, KR;

Seung Ki Baek, Suwon-si, KR;

Seung Ki Jung, Bucheon-si, KR;

Tae Sub Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/014 (2025.01); H10F 39/802 (2025.01); H10F 39/807 (2025.01);
Abstract

An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.


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