The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Sep. 06, 2023
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Takashi Kato, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 77/124 (2025.01);
U.S. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 77/1248 (2025.01);
Abstract

A semiconductor photodetector includes a first group III-V semiconductor layer of a first conductivity type; a second group III-V semiconductor layer of a second conductivity type; and an optical absorption layer disposed between the first group III-V semiconductor layer and the second group III-V semiconductor layer in a first direction. The optical absorption layer includes a plurality of unit structures stacked in the first direction. Each of the plurality of unit structures includes a gallium arsenide layer, an indium arsenide layer, and a gallium arsenide antimonide layer. The gallium arsenide layer and the indium arsenide layer each have a thickness smaller than a thickness of the gallium arsenide antimonide layer.


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