The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Aug. 02, 2022
Applicant:

North Carolina State University, Raleigh, NC (US);

Inventor:

Bantval Jayant Baliga, Raleigh, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); G01K 7/18 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 84/141 (2025.01); G01K 7/186 (2013.01); H10D 12/441 (2025.01); H10D 62/105 (2025.01); H10D 62/8325 (2025.01); H10D 64/663 (2025.01);
Abstract

A power device includes a semiconductor substrate having first and second current carrying terminals on respective first and second opposing surfaces thereof. A silicided polysilicon temperature sensor and silicided polysilicon gate electrode are provided on the first surface. A source region of first conductivity type and a shielding region of second conductivity type are provided in the semiconductor substrate. The shielding region forms a P-N rectifying junction with the source region, and extends between the silicided polysilicon temperature sensor and the second current carrying terminal. A field oxide insulating region is provided, which extends between the shielding region and the silicided polysilicon temperature sensor.


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