The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Feb. 09, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hongsik Shin, Suwon-si, KR;
Sungwoo Kang, Suwon-si, KR;
Dongkwon Kim, Suwon-si, KR;
Hyonwook Ra, Suwon-si, KR;
Jeongyeon Seo, Suwon-si, KR;
Kyungyub Jeon, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes first and second gate structures, first and second contact plug structures and a first wiring on a substrate. The first and second source/drain layers are formed on portions of the substrate adjacent to the first and second gate structures, respectively. The first and second contact plug structures are formed on the first and second source/drain layers, respectively. The first wiring contacts an upper surface of the first gate structure. The first gate structure includes a first gate electrode and a first gate insulation pattern on a lower surface and a sidewall of the first gate electrode. The second gate structure includes a second gate electrode and a second gate insulation pattern on a lower surface and a sidewall of the second gate electrode. The upper surface of the second gate electrode is lower than an upper surface of the first gate electrode.