The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Sep. 29, 2022
Denso Corporation, Kariya-city, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Yohei Iwahashi, Nisshin-city, JP;
Jun Saito, Nisshin-city, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A base layer has a low concentration peak at a position between a portion located at a same depth as a lower end portion of a gate electrode and a portion located at a same depth as an upper end portion of the gate electrode in a concentration profile of an impurity concentration in a depth direction. An impurity region has a boundary with the base layer in the depth direction at a position between a first peak position, at which the impurity concentration of the base layer is maximum between the portion located at the same depth as the lower end portion and the position of the low concentration peak, and a second peak position, at which the impurity concentration of the base layer is maximum between the position of the low concentration peak and the portion located at the same depth as the upper end portion.