The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Mar. 13, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung Mo Kang, Suwon-si, KR;
Taegon Kim, Suwon-si, KR;
Jaemun Kim, Suwon-si, KR;
Jaehoon Oh, Suwon-si, KR;
Sunhye Lee, Suwon-si, KR;
Sihyung Lee, Suwon-si, KR;
Juri Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device may include a first active pattern and a second active pattern on a substrate, a device isolation layer in a trench between the first active pattern and the second active pattern, a first channel pattern and a second channel pattern provided on the first active pattern and the second active pattern, respectively, each of the first channel pattern and the second channel pattern including a plurality of stacked semiconductor patterns, and a gate electrode on the first channel pattern and the second channel pattern. The device isolation layer may include a first portion and a second portion which are vertically overlapped with the gate electrode. The first portion may be provided on the second portion. A silicon concentration of the first portion may be higher than a silicon concentration of the second portion.