The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Sep. 07, 2022
Applicant:
Northwestern University, Evanston, IL (US);
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
Northwestern University, Evanston, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H10D 30/47 (2025.01); H10D 62/80 (2025.01); H10D 62/85 (2025.01); H10D 62/852 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 62/875 (2025.01); H10D 62/852 (2025.01); H10P 14/3216 (2026.01); H10P 14/3416 (2026.01);
Abstract
High electron mobility transistors are provided which comprise a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween.
Razeghi, Manijeh. (2026). Iii-nitride/gallium oxide based high electron mobility transistors (U.S. Patent No. 12622008). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12622008
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile