The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Nov. 15, 2022
Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Jiangsu, CN;

Inventors:

Chang Chen, Guangdong, CN;

Xiaoming Liu, Guangdong, CN;

Xinyu Li, Guangdong, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 84/01 (2026.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H10D 30/475 (2025.01); H10D 84/0123 (2025.01); H10D 84/813 (2025.01); H10D 62/343 (2025.01); H10D 62/8503 (2025.01);
Abstract

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first transistor and a clamping device. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first transistor is disposed on the second nitride semiconductor layer. The first transistor includes a first control electrode, a first current electrode and a second current electrode. The clamping device is disposed on the second nitride semiconductor layer and electrically coupled with the first transistor. The clamping device includes a second transistor and a third transistor electrically coupled with the second transistor. The clamping device is electrically coupled with the first current electrode and the second current electrode of the first transistor.


Find Patent Forward Citations

Chen, Chang. (2026). Semiconductor device structure and method of manufacturing the same (U.S. Patent No. 12620802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12620802

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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