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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12620770 B1

PDFFull Text
Date of Patent:
May. 05, 2026

Filed:

May. 13, 2021

Semiconductor laser element and method of producing semiconductor laser element

Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Yuichiro Kikuchi, Kumamoto, JP;

Yukio Hoshina, Kumamoto, JP;

Hideki Watanabe, Kumamoto, JP;

Yuta Isozaki, Kumamoto, JP;

Hidekazu Kawanishi, Kumamoto, JP;

Masahiro Murayama, Tokyo, JP;

Takashi Sugiyama, Kumamoto, JP;

Assignee:

SONY GROUP CORPORATION, Tokyo, JP;

Attorney:

CHIP LAW GROUP

Primary Examiner:

Yuanda Zhang

Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/02 (2006.01); H01S 5/343 (2006.01); H01S 5/0234 (2021.01);
U.S. Cl.
CPC ...
H01S 5/0206 (2013.01); H01S 5/22 (2013.01); H01S 5/34333 (2013.01); H01S 5/34386 (2013.01); H01S 5/0234 (2021.01);
Abstract

Provided is a semiconductor laser element according to the present technology that includes a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

Find Patent Forward Citations

Kikuchi, Yuichiro. (2026). Semiconductor laser element and method of producing semiconductor laser element (U.S. Patent No. 12620770). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12620770

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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