The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Feb. 22, 2024
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jing Xue, Saratoga, CA (US);

Chongli Cai, San Jose, CA (US);

Ziyu Xia, Cupertino, CA (US);

Jitendra K Agrawal, San Jose, CA (US);

Joey Yurgelon, San Jose, CA (US);

Hao Zhou, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); G01R 19/165 (2006.01); G01R 19/32 (2006.01); G05D 23/24 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
G05D 23/2451 (2013.01); G01R 19/16519 (2013.01); G01R 19/32 (2013.01); H02M 1/0009 (2021.05); H02M 3/158 (2013.01); H02M 3/1588 (2013.01);
Abstract

A current sensing circuit includes a first field-effect transistor (FET) coupled to a first current source, an inductor, and a power FET, and includes a second FET coupled to a second current source. The current sensing circuit also includes a temperature circuit coupled to the first FET and the second FET. The temperature circuit is configured to compensate for one or more differences between one or more temperature coefficients of one or more of the first FET, the second FET, and the power FET.


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