The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Jul. 18, 2023
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Yusuke Watanabe, Nagoya, JP;
Daichi Ichikawa, Nagoya, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/407 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4072 (2013.01); G01N 27/4077 (2013.01); G01N 27/4078 (2013.01); G01N 33/0037 (2013.01); G01N 33/0059 (2013.01);
Abstract
Provided is a gas sensor element or the like in which a diffusion mode of NOreaching a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the present invention, a porous diffusion layer covering a measurement electrode has a porosity that is lower than the porosity of a leading end protection layer covering at least a face of an element substrate in which a gas inlet is open, and that is 5% or more and 25% or less.