The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 19, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Andrea Leoncini, Singapore, SG;
Doreen Wei Ying Yong, Singapore, SG;
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); C09K 13/00 (2013.01);
Abstract
Provided are methods of manufacturing memory devices. The methods include exposing a film stack to an etching gas to remove alternating sacrificial layers of silicon nitride in the film stack. The memory devices have alternating layers of silicon oxide and silicon nitride and an opening formed therein. The etching gas comprises derivatives of phosphoric acid, phosphonic acid, and phosphonic acid. The silicon nitride layers are selectively etched relative to the silicon oxide layers with improved isotropicity and without compromising the integrity of the film stack.