The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 28, 2023
Beijing Superstring Academy of Memory Technology, Beijing, CN;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Jianfeng Gao, Beijing, CN;
Shuai Yang, Beijing, CN;
Jinbiao Liu, Beijing, CN;
Weibing Liu, Beijing, CN;
Junfeng Li, Beijing, CN;
Jun Luo, Beijing, CN;
Jinjuan Xiang, Beijing, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Abstract
A conformal boron doping method for a three-dimensional structure includes the steps of: removing a natural oxide layer on a surface of a silicon-based three-dimensional substrate; forming a buffer layer on the surface of the silicon-based three-dimensional substrate; forming a boron oxide thin film on the alumina buffer layer; covering a passivation layer on a surface of the boron oxide thin film; and driving boron impurities containing boron oxide into the silicon-based three-dimensional substrate through the buffer layer by using laser or rapid annealing, to dope the silicon-based three-dimensional substrate. Selecting suitable boron source precursors and oxidants solves the problems of difficult nucleation and inability to form a film after reaching a certain thickness for boron oxide. By selecting alumina as the passivation layer, it is possible to protect the boron oxide thin film from being damaged, and thus achieve damage-free diffusion doping during laser or rapid annealing processes.