The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 21, 2022
Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyungwook Hwang, Suwon-si, KR;
Junsik Hwang, Suwon-si, KR;
Dongho Kim, Suwon-si, KR;
Joonyong Park, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); H01L 21/02403 (2013.01); H01L 21/0262 (2013.01); H01L 25/0753 (2013.01); H10H 20/0133 (2025.01); H10H 20/018 (2025.01); H10H 20/825 (2025.01);
Abstract
A method of manufacturing a semiconductor device, including: forming a membrane forming pattern on a substrate; forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern; forming a membrane having a protruding pattern by crystallizing the membrane material layer; forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and transferring the 2D material pattern to a transfer substrate.