The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Nov. 05, 2021
Monash University, Clayton, AU;
Newsouth Innovations Pty Limited, Sydney, AU;
University of Wollongong, New South Wales, AU;
Monash University, Clayton, AU;
NewSouth Innovations Pty Limited, Sydney, AU;
University of Wollongong, New South Wales, AU;
Abstract
A transistor comprises a planar layer of a topological material located between a gate electrode and a dielectric layer. The topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on application of an electric field in a direction perpendicular to the planar layer. The topological material exhibits a change in bandgap, in the presence of the electric field, having a Rashba spin-dependent bandgap contribution that is at least three times as large as a non-spin-dependent bandgap contribution.