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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12615909 B1

PDFFull Text
Date of Patent:
Apr. 28, 2026

Filed:

Jun. 28, 2022

Light-emitting device and light-emitting apparatus

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Yui Yoshiyasu, Atsugi, JP;

Sachiko Kawakami, Atsugi, JP;

Naoaki Hashimoto, Sagamihara, JP;

Tsunenori Suzuki, Yokohama, JP;

Satoshi Seo, Sagamihara, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., , JP;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Sean M Deguire

Int. Cl.
CPC ...
H10K 50/16 (2023.01); C07D 401/14 (2006.01); C07D 403/10 (2006.01); C07D 403/14 (2006.01); C07D 409/10 (2006.01); C07D 471/04 (2006.01); C07D 491/048 (2006.01); C07D 519/00 (2006.01); C07F 7/22 (2006.01); C07F 15/00 (2006.01); H10K 50/17 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 50/166 (2023.02); C07D 401/14 (2013.01); C07D 403/10 (2013.01); C07D 403/14 (2013.01); C07D 409/10 (2013.01); C07D 471/04 (2013.01); C07D 491/048 (2013.01); C07D 519/00 (2013.01); C07F 7/2284 (2013.01); C07F 15/0093 (2013.01); H10K 50/171 (2023.02); H10K 85/30 (2023.02); H10K 85/346 (2023.02); H10K 85/654 (2023.02); H10K 85/656 (2023.02); H10K 85/657 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02);
Abstract

A light-emitting device with high resistance to heat in a fabrication process is provided. The light-emitting device includes an EL layer between an anode and a cathode. The EL layer includes at least a light-emitting layer and an electron-transport layer that includes a first electron-transport layer in contact with the light-emitting layer and a second electron-transport layer in contact with the first electron-transport layer. The first electron-transport layer includes a first heteroaromatic compound including at least one heteroaromatic ring. The second electron-transport layer includes a second heteroaromatic compound that includes at least one heteroaromatic ring and is different from the first heteroaromatic compound. The first heteroaromatic compound has a difference of 20° C. or less between the crystallization temperature (Tpc) of a powder state and the crystallization temperature (Ttc) of a thin film state. The second heteroaromatic compound has a difference of 100° C. or less between Tpc and Ttc.

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