The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jun. 04, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Guoying Wang, Beijing, CN;

Zhen Song, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/832 (2025.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/84 (2025.01);
U.S. Cl.
CPC ...
H10H 20/835 (2025.01); H10H 20/032 (2025.01); H10H 20/831 (2025.01); H10H 20/84 (2025.01);
Abstract

A light-emitting device, a manufacturing method thereof and a display panel are provided. The light-emitting device includes a semiconductor structure, including: first semiconductor layer, light-emitting layer and second semiconductor layer arranged in stack; an insulating layer, having first, second and third barriers, the first barrier is disposed at outer sidewall of the semiconductor structure, the second barrier at least partially protrudes from central region of a surface of the second semiconductor layer, the third barrier and the second barrier are spaced apart; a first electrode, the first electrode covers surfaces of the first barrier and the third barrier not in contact with the semiconductor structure, and the first electrode is connected to the first semiconductor layer; and a second electrode, the second electrode covers the second barrier and is connected to the second semiconductor layer.


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