The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Aug. 15, 2023
Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou, CN;
Miaomin Cai, Quanzhou, CN;
Sihe Chen, Fujian Province, CN;
Yashu Zang, Fujian Province, CN;
Chungchieh Yang, Quanzhou, CN;
Chung-Ying Chang, Fujian Province, CN;
Chi-Ming Tsai, Anhui, CN;
Zhuoying Jiang, Quanzhou, CN;
Yu-Chieh Huang, Fujian Province, CN;
Su-Hui Lin, Fujian, CN;
QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan City, CN;
Abstract
A light emitting diode includes a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure has a first surface and a second surface. The semiconductor structure includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that includes a P-type contact layer, and a P-type base layer located between the P-type contact layer and the active layer. The active layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The first electrode is located on the second surface of the semiconductor structure, and is electrically connected to the N-type semiconductor layer. The second electrode is located on the second surface of the semiconductor structure, and is electrically connected to the P-type semiconductor layer. A P-type dopant concentration in the P-type contact layer gradually decreases along a direction from the first surface towards the second surface.