The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 02, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
In Chul Jeong, Icheon-si, KR;
Moung Seok Baek, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/811 (2025.01); H10F 39/011 (2025.01); H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/809 (2025.01);
Abstract
An image sensing device includes a semiconductor substrate, an insulation layer disposed below the semiconductor substrate, a through hole formed to extend to the inside of the insulation layer while penetrating the semiconductor substrate, a through silicon via (TSV) structure formed along an inner surface of the through hole, and a photoresist formed over the TSV to gap-fill at least a portion of the through hole.
Jeong, In. (2026). Image sensing device including through silicon via (tsv) structure (U.S. Patent No. 12615871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615871
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile