The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jun. 25, 2024
Ciena Corporation, Hanover, MD (US);
Ciena Corporation, Hanover, MD (US);
Abstract
An avalanche photodiode includes a silicon layer on a substrate; a germanium layer on the silicon layer; and a plurality of contacts including a cathode, an anode, and at least two separate gain tuning contacts configured to adjust an electric field to tune multiplication of carriers. The at least two separate gain tuning contacts are configured to control the electric field in the germanium layer and silicon layer. The at least two separate gain tuning contacts are configured to tailor the electric field such that the multiplication of carriers is greater in the silicon layer than the germanium layer. This added gain tuning control can be used to tailor the electric field profile such that multiplication happens mostly in silicon to achieve lower excess noise and little to no bandwidth variation.