logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12615849 B1

PDFFull Text
Date of Patent:
Apr. 28, 2026

Filed:

Oct. 25, 2021

Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a p- or n-type material/perovskite composite layer

Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

3sun S.r.l., Catania, IT;

Inventors:

Matthieu Manceau, Grenoble, FR;

Olivier Dupre, Grenoble, FR;

Noella Lemaitre, Grenoble, FR;

Assignees:

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;

3SUN S.R.L., Catania, IT;

Attorney:

Chrisman Gallo Tochtrop LLC

Primary Examiner:

Christina Chern

Int. Cl.
CPC ...
H10K 30/40 (2023.01); H10F 10/142 (2025.01); H10K 30/20 (2023.01); H10K 30/80 (2023.01); H10K 71/12 (2023.01); H10K 71/40 (2023.01); H10K 85/50 (2023.01); H10K 30/35 (2023.01); H10K 30/57 (2023.01);
U.S. Cl.
CPC ...
H10F 10/142 (2025.01); H10K 30/211 (2023.02); H10K 30/40 (2023.02); H10K 30/865 (2023.02); H10K 71/12 (2023.02); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10K 30/35 (2023.02); H10K 30/57 (2023.02);
Abstract

Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a P- or N-type material/perovskite composite layer including: A/a silicon-based sub-cell A; and B/a perovskite-based sub-cell B, comprising at least: —a conductive or semiconductor layer of the N type in the case of a NIP structure, or of the P type in the case of a PIN structure, and—a composite layer, superimposed over the lower conductive or semiconductor layer, comprising at least one perovskite material and at least one material of the P type in the case of a NIP structure or of the N type material in the case of a PIN structure.

Find Patent Forward Citations

Loading…