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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12615839 B1

PDFFull Text
Date of Patent:
Apr. 28, 2026

Filed:

Aug. 15, 2022

Semiconductor device and method for manufacturing the same

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Koichi Nishi, Tokyo, JP;

Koji Tanaka, Tokyo, JP;

Shinya Soneda, Tokyo, JP;

Shigeto Honda, Tokyo, JP;

Naoyuki Takeda, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker Brackett PLLC

Primary Examiner:

Jessica S Manno

Assistant Examiner:

Christopher A. Schodde

Int. Cl.
CPC ...
H10D 84/60 (2025.01); H01L 21/24 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10P 30/20 (2026.01); H10P 30/22 (2026.01); H10P 95/00 (2026.01);
U.S. Cl.
CPC ...
H10D 84/617 (2025.01); H10D 8/422 (2025.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01); H10P 30/22 (2026.01); H10P 95/50 (2026.01);
Abstract

A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

Find Patent Forward Citations

Nishi, Koichi. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12615839). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615839

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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