The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 14, 2022
Thinsic Inc, Santa Clara, CA (US);
Bishnu Prasanna Gogoi, Scottsdale, AZ (US);
Jinho Seo, Saratoga, CA (US);
ThinSiC Inc., Santa Clara, CA (US);
Abstract
A trench field effect transistor comprising a substrate. An epitaxial buffer layer is formed overlying the substrate. An epitaxial device layer is formed overlying the epitaxial buffer layer. A device body layer is formed overlying the epitaxial device layer. The substrate, epitaxial buffer layer, epitaxial device layer, and device body layer comprise silicon carbide. A trench formed in the device body layer into at least a portion of the epitaxial body layer. An insulating layer formed on the walls of the trench. A bottom of the trench is etched isotropically and forms a curved surface. The trench bottom after the isotropic etch extends past the walls of the trench and couples to the trench walls in a curve. An oxide layer is formed overlying the trench bottom and has a corresponding curve similar to the trench bottom. A gate oxide is formed on at least one wall of the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile