The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Nov. 16, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Shinsuke Watanabe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/48 (2006.01); H10D 64/23 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/257 (2025.01); H01L 23/481 (2013.01); H01L 23/66 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6622 (2013.01); H01L 2223/6688 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract

A transistor according to the disclosure includes a semiconductor substrate, a source pad provided on an upper surface of the semiconductor substrate, a plurality of source electrodes provided on the upper surface of the semiconductor substrate and arranged in an arrangement direction, the plurality of source electrodes each including a first end connected to the source pad and a second end on a side opposite to the source pad, a plurality of drain electrodes arranged alternately with the plurality of source electrodes in the arrangement direction, a gate electrode and a first wire configured to connect the second ends of a plurality of central electrodes provided at a central part of the semiconductor substrate in the arrangement direction among the plurality of source electrodes, and not to connect the second ends of the source electrodes other than the plurality of central electrodes.


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