The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jun. 07, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Satoru Tokuda, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/118 (2025.01); H10D 30/668 (2025.01); H10D 64/117 (2025.01);
Abstract
A semiconductor device includes a trench formed in an n-type semiconductor substrate, a p-type body region, an n-type source region, a field plate electrode formed at a lower portion of the trench, and a gate electrode formed at an upper portion of the trench. A gate potential is to be supplied to the gate electrode, a source potential is to be supplied to the source region and the body region, and a drain potential is to be supplied to the semiconductor substrate. A potential larger than the source potential and smaller than the drain potential is to be supplied to the field plate electrode.