The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jul. 06, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Nam Jae Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 64/018 (2025.01); H10D 64/254 (2025.01); H10D 64/513 (2025.01); H10D 84/83 (2025.01); H10D 30/027 (2025.01);
Abstract
A semiconductor device may include a silicide gate electrode that is disposed over a substrate, a first epitaxial pattern that protrudes from the substrate, a second epitaxial pattern that protrudes from the substrate, a silicide source contact that is connected to the substrate through the first epitaxial pattern and that is disposed at a level different from a level of the silicide gate electrode, and a silicide drain contact that is connected to the substrate through the second epitaxial pattern and that is disposed at a level different from the level of the silicide gate electrode.